A photothermal method of simultaneous determination of ultra-shallow junction depth and abruptness

Thermal wave (TW) studies of ultra-shallow junctions (USJ) formed by ion implantation into a semiconductor wafer followed by rapid thermal annealing (RTP) are described. It is shown that using the TW technique allows for a simultaneous determination of the most important USJ parameters – depth and profile abruptness. Experimental results for junction depth and abruptness obtained on a set of B+-implanted, RTP-annealed USJ samples show better than 0.99 correlations to the corresponding secondary ion mass spectroscopy (SIMS) data.