Hetero-epitaxial growth method

PURPOSE: To obtain a growth method, in which interface defect density is reduced in epitaxial growth between crystals of a different kind, in which there is a lattice mismatch. CONSTITUTION: In the hetero-epitaxial growth method and device, a single- crystal ceramic substrate 20 consisting of zirconia, MgAl 2 O 4 , Al 2 O 3 , 3C-SiC, 6H-SiC or MgO desirably stabilized by Y is cut out while being displaced at approximately 1.0-10° so as to substantially form a flat surface, and ground. Atoms are rearranged on the surface, and surface steps 22 at least three lattice spacings are formed. The additional epitaxial-growth buffer layer of ceramics desirably composed of AlN or GaN may also be formed on the substrate 20. A semiconductor layer 24 desirably made up of SiC is grown on the board or on the buffer layer at the time of the usage of the buffer layer. COPYRIGHT: (C)1995,JPO