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Gate leakage current of AlGaN/GaN HEMTs device influenced by substrate defects
Gate leakage current of AlGaN/GaN HEMTs device influenced by substrate defects
2005
Keiichi Matsushita
H. Sakurai
Kazutaka Takagi
Hisao Kawasaki
Yoshiharu Takada
T Sasaki
Kunio Tsuda
Keywords:
Optoelectronics
Chemical substance
Imagination
Science, technology and society
gate leakage current
Substrate (chemistry)
algan gan
Materials science
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