Range profiles of implanted Bi and Au in amorphous silicon

Abstract The Rutherford backscattering technique is used to measure the depth profiles for 10 to 390 keV 209 Bi and 15 to 390 keV 197 Au implanted in amorphized silicon wafers. The obtained projected ranges and projected range stragglings are compared with previous data and with recent universal range-energy calculations. Whereas good agreement is found between the experimental and theoretical range predictions for Bi, the measurements for Au yield, at low energies, ranges longer than predicted. The discrepancy between measured Au and Bi ranges is ascribed to the Z 1 -range oscillation.