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Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers
Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers
2007
S. Maikap
P-J Tzeng
T.-Y. Wang
H. Y. Lee
C. H. Lin
S. C. Lo
L.S. Lee
J. R. Yang
M-J Kao
M.-J. Tsai
Keywords:
Nanocrystal
Nanotechnology
Materials science
Tin
Composite material
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