A broadband 200W GaN push-pull power amplifier enhanced second harmonic suppression with point-symmetric 2-stage baluns

A broadband 200W Gallium Nitride (GaN) push-pull amplifier enhanced a second harmonic (2fo) suppression is presented. A point-symmetric 2-stage baluns are applied to enhance the 2fo suppression in input and output circuits. With the presented configuration, the 2fo suppression of 10dB is improved. The broadband amplifier is fabricated with the presented configuration. Between 0.2GHz and 0.8GHz, the 2fo distortion bellow −40dBc and power added efficiency (PAE) of over 45% can be achieved at the saturated power of over 52dBm.