All-electric all-semiconductor spin field-effect transistors

We thank C.-W. Chang, C.-C. Cheng, M. Fletcher, S. N. Holmes, C.-T. Liang, S.-T. Lo and J. R. Petta for discussion and/or technical assistance on device fabrication and measurements. This work was supported by the Ministry of Science and Technology (Taiwan), the Headquarters of University Advancement at the National Cheng Kung University, and the Engineering and Physical Sciences Research Council (UK).