In AlAs/In GaAs Metamorphic HEMTs

In this work, we demonstrate a compact 77GHz single-chip transceiver for an automotive radar system. The transceiver consists of a low noise amplifier, mixer, doubler and power amplifier. The MMIC chip set is fabricated using a 120nm -gate-length In0.4AlAs/In0.35GaAs mHEMT. The low noise amplifier demonstrated a small signal gain of 19dB at 77GHz. The resistive mixer achieved a -11dB conversion gain. The doubler achieved 0.4dBm output power, a -5.6dB conversion gain and a difference of 18.4dBc between the 77GHz output and the fundamental output. The power amplifier demonstrated a small signal gain of 21.4dB at 77GHz with 12.3dBm output power. The single-chip transceiver demonstrated 9.3dBm output power at the transmitter and a 5dB conversion gain at the receiver. µ -thick GaAs substrate (7). We used a frequency multiplier instead of the VCO as the frequency source. By utilizing the high gain performance of the MHEMT, a 3-stage PA presents enough gain for the output power amplification of the frequency multiplier, allowing a low-risk implementation. The chip set consists of a frequency doubler and frequency quadrupler, a power amplifier (PA), a low noise amplifier (LNA), a mixer, and two types of transceivers integrated with the aforementioned MMIC components.