Ge:Be infrared photoconductors

Ge:Be photoconductors were optimized for the 30 to 50 micron wavelength range. Crystal growth of detector quality material requires good control of both the Be and residual impurity doping. Detective quantum efficiencies of n sub d = 46% at 5 A/W were achieved at a photon background of 10 to the 8th power p/s. The responsivity of Ge:Be detectors can be strongly temperature-dependent when the residual shallow levels in the material are closely compensated. Transient responses on the order of approximately 1 second were observed in some materials. The role of residual shallow impurities on the performance of photoconductors doped with semi-deep and deep impurities is discussed.