High pressures, low temperatures, and magnetic field effects on AgFeAsSe3 and AgFeSbSe3 properties

A procedure for synthesizing AgFeAsSe3 and AgFeSbSe3 is presented, and their electric and magnetic properties are investigated over a wide range of temperatures, pressures, and magnetic field variation. At 100–400K, the samples are characterized by semiconductor properties. Under pressures of ∼25 and ∼24 GPa, the electric properties of AgFeAsSe3 and AgFeSbSe3 change greatly.