Method for manufacturing semiconductor device having a single floating island and semiconductor device manufactured thereby

The present invention relates to a semiconductor device manufactured by the manufacturing method and a manufacturing method of a semiconductor device having a single structure FLI. A method for manufacturing a semiconductor device according to an embodiment of the present invention to form the N-type epitaxial layer of claim 1 on the N-type substrate; Forming a P-type floating region by implanting P-type impurity on a portion of the first N-type epitaxial layer 1; The step of forming the first 2 N-P type base region by implanting P-type impurity to the upper both sides of the epitaxial layer;: a first step of forming an N-type epitaxial layer 2 over the N-type epitaxial layer of claim 1 Forming an N + region by implanting N-type impurity in the upper portion of the P-base region; Forming a gate electrode on the N-type drift region; The step of on the N-type drift region forming a source electrode to contact the P-base and the N + region; And comprising the step of forming a drain electrode on the N-type substrate below, it included in the claim 1 the N-type epitaxial layer and the first 2 N-type epitaxial layer is formed in the N type drift region, and the N-type drift layer the concentration of N-type impurity may be determined based on a breakdown voltage that is not a floating P-type region, corresponding to the particular semiconductor device the concentration Nd of the N-type drift layer.