Piezoelectric effect on the lasing characteristics of (111)B InGaAs/AlGaAs laser diodes

In this work we investigate both experimentally and theoretically the effect of the piezoelectric (PZ) field on the lasing characteristics of InGaAs (111)B quantum wells. We show that, under certain conditions, the existence of the PZ field can be beneficial and lead to substantial threshold current reduction in (111)‐grown InGaAs/AlGaAs laser diodes, compared to their (100) counterparts.