MOS transistor (I-MOS) is where l isthelength ofavalanche region, Vsatthesaturation pointed outandstudied forthefirst time. Thistrade-off isuniquevelocity ofcarriers, andoitheaverage ionization rate. This forI-MOSdevices, andisrelated totheself-amplifying carrierphasedelay ischaracteristic toimpact-ionization baseddevices multiplication, theexact phenomenon usedtobeviewed asamerit.because thecarrier generation rate islimited bytheparticle cur- Monte-Carlo simulation isperformed tostudy therandomprocess rentalready flowing through thedevice. Therefore, assuming ofcarrier multiplication inI-MOS,andthephysical limit tothe a .