Quasi-hydrodynamic modeling of heterostructure field-effect transistors

A new, two-dimensional hydrodynamic model is proposed for analyzing the operating modes of a heterostructure field-effect transistor, which is a combination of the quasi-hydrodynamic model for the Schot-tky-gate FET and the Anderson model for the heterojunction. On the basis of the proposed model, a simulation program for the AlGaAs/InGaAs heterostructure FET with two heterojunctions is developed. The calculated output current-voltage curves are compared with the published results of measurements and Monte Carlo simulations. The possibility of calculating parameters and spline characteristics of both small-signal (linear) and large-signal (nonlinear) equivalent circuits of heterostructure FETs is demonstrated.