Development of the radiation sensitivity of PMOS dosimeters

The effect of gate oxide growth conditions on the sensitivity of the NMRC's PMOS RADFET, which has a 400-nm dry/wet/dry gate oxide is investigated. The necessity for such an evaluation arose because the PMOS RADFET standard gate oxide consists of a dry/wet/dry 400-nm oxide, and published data for the effects of processing conditions on gate oxides are mainly for either wet or dry oxides with a thickness in the more conventional gate oxide range of 20 nm-100 nm. It is clearly shown that, for any given RADFET gate oxide, an optimum set of processing conditions exists to maximize the RADFET's radiation sensitivity. A by-product of the evaluation of the processing conditions is that it is possible to set up a sensitivity-oxide thickness curve at the optimum processing conditions. >