IMPROVED ACTIVATION OF MG+ AND P+ DUAL IMPLANTATION INTO GAAS

Co-implantation of phosphorus was used to enhance the activation of the implanted magnesium in GaAs. Improved activations were observed in dually implanted samples by either furnace annealing or rapid thermal annealing. For dose of 5 × 1014 cm-2 Mg+, an activation of 74% with a sheet resistance 216Ω/ was obtained for dual implant compared to the activation of 33% and sheet resistance of 367Ω/ for single implant after rapid thermal annealing. The results suggest that the high carrier concentration can be obtained by this technique.