Old Web
English
Sign In
Acemap
>
Paper
>
In-situ TEM of Cu movement in MoO x /Al 2 O 3 double layer CBRAM
In-situ TEM of Cu movement in MoO x /Al 2 O 3 double layer CBRAM
2021
Masashi Arita
ryusuke ishikawa
Atsushi Tsurumaki-Fukuchi
Yasuo Takahashi
Keywords:
In situ
Resistive random-access memory
Materials science
double layer
Composite material
Programmable metallization cell
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]