Study on IC Process Parameter Control of MOVCD Using PID Algorithm

There are several important steps in modern wafer manufacturing: oxidation, deposition, lithography, etching, ion implantation, diffusion, etc. Metal organic chemical vapor deposition (MOCVD) is one of the most commonly used CVD techniques for thin film deposition in integrated circuits. MOCVD is a new technology for manufacturing high-quality integrated circuit films. In order to make the MOCVD system work properly, we need to accurately control the parameters of the process (pressure, temperature, flow). In this study, a Simulink toolbox of MATLAB was used to simulate the control object of MOCVD, and to obtain the incremental PID algorithm and control results. It is found that the adjustment of the system timeout is not effective because of the long adjustment time. However, this research using the Smith predictor is added to optimize the control effect and improve the controller; reduce the adjustment time of the system; adjust the system timeout to zero; and have better control efficiency in the pressure, flow, and temperature control system, and this is an important breakthrough in this research.