On the Effect of the Electron Distribution in the Near-Contact Region and Asymmetry of the Resonant-Tunneling Diode Structure on the High-Frequency Response and the Possibility of Detecting the Quantum Amplification Mode in an External High-Frequency Electric Field

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. The high-frequency response in structures with symmetric and asymmetric barriers was analyzed by numerical simulation methods. The effect of the Fermi distribution of carriers in the near-contact region was studied. It was shown that asymmetric structures with decreased impurity concentrations (1017 cm−3) in the emitter region are optimum from the viewpoint of experimental observation of the quantum amplification mode.