Nano composite Si2Sb2Te film for phase change memory

Abstract Growth-dominant Sb 2 Te material with large crystal grain is converted to the nano composite material after Si doping. The increase of Si content in Si x Sb 2 Te material helps to further diminish the grain size, form more uniform grain distribution, and enhance the thermal stability of the amorphous phase. Si 2 Sb 2 Te crystallizes into a nano composite structure [amorphous Si + crystalline Sb 2 Te ( 2 Sb 2 Te 5 film, Si 2 Sb 2 Te film shows better data retention ability (10 years at 397 K). Meanwhile, electrical measurements prove that phase change memory cell based on Si 2 Sb 2 Te film also has low power consumption than that of the Ge 2 Sb 2 Te 5 film based cell.