Evolution of shallow donors with proton fluence in n‐type silicon

Bipolar components that consist of p+n junctions have been irradiated by MeV protons at fluences ranging from 1011 to 1013 particles cm−2. Capacitance‐voltage measurements have been used to investigate changes in the carrier concentration profiles. Shallow donors that can induce harmful effects in electronic devices have been studied as a function of fluence, flux, and annealing parameters.