Research data supporting 'N-type ohmic contacts to undoped GaAs/ AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs'

Scanning electron microscope images of pits etched in undoped GaAs/AlGaAs heterostructure samples prior to deposition of ohmic contact metal, and low-temperature electrical transport data for an ambipolar field-effect transistor fabricated using a new recipe for making n-type ohmic contacts to two-dimensional electron gases in undoped GaAs/AlGaAs structures. The data supports the Semiconductor Science and Technology article, 'N-type ohmic contacts to undoped GaAs/ AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs.' The data were collected at the Cavendish Laboratory, University if Cambridge, in the period January 2011 to September 2016.