Observation of the vortex-glass transition in the low-temperature high-field regime in thick a-MoxSi1−x films

Abstract We present measurements of dc and ac complex resistivities for thick amorphous (a-)Mo x Si 1− x films at low temperatures ( T >0.04 K) in various fields B . The critical behavior associated with the vortex-glass transition (VGT) has been observed for both dc and ac resistivities. The VGT persists down to low enough temperatures T B ∼0.9 B C2 (0), where B C2 (0) is the upper critical field at T = 0. In the limit of zero temperature the VGT line B g ( T ) extrapolates to a value below B C2 (0), indicative of the presence of a T =0 quantum liquid phase in the regime B g (0) B B C2 (0).