GaN nanodot fabrication by implant source growth

Abstract By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO 2 . The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO 2 layer by using a focused ion beam system followed by annealing under an NH 3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.