Influence of the method used to reduce the substrate thickness on the distribution of strain field in GaAs structures

An investigation was made of multilayer epitaxial GaAs films of thickness less than 1 μm. They were formed by the vapor epitaxy method using a Ga-AsCl 3 -H 2 system and semiinsulating (100) GaAs substrates. X-ray diffraction methods were used to investigate the thickness of the disturbed layer and the macrobending of epitaxial systems as a result of reduction of the thickness of the substrate by a variety of methods from the initial value of ∼300-400 μm to the required value (less than 100 μm). A theoretical analysis of the results obtained was made allowing for the elastoplastic state of the disturbed layer and for macrobending of the system