A method for producing a self-aligned silicide

A method for producing a self-aligned silicide comprising the steps of: Providing a substrate (21) with a first type having at least one MOS component area (22) thereon, the MOS component portion (22) having a gate region (23), lightly doped regions (23a) and insulating regions (24); Depositing a first insulating layer (25) on a surface of the substrate (21); Anisotropically etching the first insulating layer (25) for removing the first insulating layer and to form spacer elements (26) at respective side walls of the gate region (23) and for simultaneously removing a portion of an upper layer of the field insulating regions (24) for forming lateral flanks at the edges of the MOS component area (22); The implanted ions with a second type in the MOS component area at an inclination angle (22) using the spacers (26) and the gate region (23) as a mask to form a plurality of source / drain regions (27) in the substrate (21) to produce on each side of the gate region; completely covering the top surface with a metallic layer (30); Implementation of a ...