Chemical characterization of III-V heterostructures in 3D architecture

Display Omitted Uniform III-V heterostructures selectively grown on non-planar 300mm Si substrate were studied using SIMS.SIMS protocols were developed to obtain 2D depth profiles of III-V materials in 3D architectures.3D reconstructions of individual confined InGaAs layers were obtained using ToF-SIMS and atom-probe. Future nanoelectronic devices will integrate ultra-thin multilayers of various materials in 3D architecture. The depth and lateral resolution become critical for the analysis of the chemical composition of such materials. 2D composition depth profiling with high resolution for arrays of III-V trenches has been studied using magnetic sector secondary ion mass spectrometry. The averaged SIMS profiles were compared with 3D reconstructions of individual trenches containing confined InGaAs layers using higher spatial techniques: time-of-flight secondary ion mass spectrometry and atom probe tomography.