Optical Measure of Disorder: Why Urbach analysis works for Amorphous Silicon but fails for Amorphous Carbon

Abstract We investigate the basis for the Paradox where the Urbach-slope disorder parameter disagrees with the Raman width in amorphous diamond-like carbon (DLC) materials (lower Urbach-Eo yet greater Raman width). We examined the bandgap and Urbach-slope measurement issues. While significant errors are identified, ultimately these cannot resolve the Paradox. This resolution involves large changes in shape of DLC’s absorption band resulting from large energy shifts. To solidify the understanding of band energy shifts, we examined their properties using a-Si:H, well known for its agreement between Raman and Urbach-slope disorder parameters. Using Tauc-Lorentz (T-L) dispersion functions, the Urbach method works for a-Si:H because small changes in shape occur, as measured by (i) peak position, (ii) peak width, (iii) peak amplitude, and (iv) and gap energies. Moreover, for a-Si:H, a 5th condition (v) there is no other feature below the principal band to interfere with its fall. All 5 of these conditions fail for DLCs. Because T-L dispersions accommodate asymmetry, we traced the Paradox to a steepening of the band shape as it pushes toward lower energy. This steepening is unrelated to disorder, but to a boundary value problem where energy cannot be negative. We conclude that Urbach analysis is invalid for DLC materials, but the T-L width is a good measure instead. We also examined another disorder measure, where π bonds should be considered as disorder relative to the σ bonds in an idealized “amorphous diamond” sp3 network: superconvergence can be used to quantify these π transitions. Finally, further molecular orbital calculations are needed to properly interpret the changes in T-L widths.