One mask step a-Si:H/a-SiOxNy thin film transistor

Amorphous Thin Film Transistors (TFT's) with different channel lengths (L) and channel widths (W), utilizing silicon oxynitride (SiO x N y ) obtained by PECVD as gate insulating material, are fabricated through a just one masking process and characterized by I ds vs. V ds and I ds vs. V gs measurements. A constant threshold voltage (V th ) was found for all geometries and the transistors characteristics correlate well with the W/L ratios.