SrTiO 3 Films Prepared by MOCVD Using Novel Sr Source

SrTiO 3 thin films have been prepared by MOCVD. A novel Sr source of Sr(DPM) 2 -tetraen 2 was used to stabilize source delivery and to reduce the vaporization temperature of Sr source. Films were deposited on Pt/Ta/Si substrates at deposition temperatures from 450 °C to 600 °C. The relative dielectric constant was about 220 at the deposition temperatures from 550 °C to 600 °C for as-deposited 90-nm-thick films. The leakage current density was in the range of 10 −7 A/cm 2 , typically.