Spin recovery in the 25nm gate length InGaAs field effect transistore

We augmented an ensemble Monte-Carlo semiconductor device simulator [3] to incorporate electron spin degrees of freedom using a Bloch equation model to investigate the feasibility of spintronic devices. Results are presented for the steady state polarization and polarization decay due to scattering and spin orbit coupling for a III-V MOSFET device as a function of gate voltages, injection polarization and strain.