Old Web
English
Sign In
Acemap
>
Paper
>
A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation
1999
K. Haraguchi
Kazuyoshi Torii
Jiro Yugami
Takahiro Onai
Keywords:
Electron beam physical vapor deposition
Nanotechnology
Analytical chemistry
Insulator (electricity)
Materials science
Equivalent oxide thickness
Optoelectronics
gate insulator
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]