Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI

In this work, we report high performance (I on ∼1 mA/µm at Ioff 100nA/µm @ 1V Vcc) short channel p-type SiGe/Si FinFETs combining high mobility, low T inv (scaled High-k w/o Si cap), low R sd , and process-induced strain. A dual channel scheme for high mobility CMOS FinFETs is demonstrated.