利用鈍化層與雷射退火改善由大氣電漿輔助化學氣相沉積製備氧化鉿/氧化鋁/銦鎵鋅氧薄膜電晶體之電性研究

Recently, amorphous indium-gallium-zinc oxide thin film transistors are become attractive for use as driving devices in large scale active matrix organic light emitting diode applications and as switching devices in active matrix liquid crystal displays because of the area uniformity and the filed effect mobility. When the fabrication technology become better, the TFT device size become smaller. When the device size become smaller, the leakage current problem become more important. To solve this problem, we use high-k material as gate dielectric layer in the TFT device. Because of the high dielectric constant, the TFT device size can be smaller than before. And IGZO film in new process technology is developed. Novel atmospheric pressure plasma enhanced chemical vapor deposition oxide (AP-PECVD) is proposed to fabricate IGZO film. Also, water-based metal salt solution, which is an eco-friendly precursor, is adopted, and the thin film can be deposited in atmospheric environment. The non-vacuum AP-PECVD offers several competitive advantages, such as low temperature process, low cost and suitable for large area application. It is expected for commercial applications in the future. In this letter, fabricate the IGZO TFT device as the gate dielectric layer annealing at different temperature by furnace. And we compare the performance of the TFT device. Then we choice the best performance of the TFT device to use laser annealing and passivation layer that compares the TFT device without any treatment. Frist, we discuss the TFT device with laser annealing treatment, from our experiment, we can realize the on current and filed effect mobility is better than the TFT device without laser annealing treatment. Second, the photoresist is deposited on the top of the IGZO film, let IGZO film no reaction with oxygen and water molecules in surroundings. Usually, we compare the shift of threshold voltage of TFT device with passivation layer and no passivation layer. In this letter, the TFT device is heating from 0s to 3000s at 50°C, 80°C, and 100°C, respectively. According to this experiment, we know the shift of threshold voltage of the TFT device with passivation layer is smaller than the TFT device without passivation layer. Finally, we can realize the performance and the stability of the TFT device in these treatment is better than the TFT device without any treatment.