Mean projected range of ions in homogeneous materials

Mean projected ranges of Hg+ implanted at energies from 50 to 400 keV in aluminium are measured by MeV4He+ Rutherford backscattering. The obtained projected ranges and other previous results of Br+ and Hg+ implanted in silicon, quartz crystal and glass are compared with Biersack's angular diffusion model. The results show that there is good agreement between the experimental and calculated mean projected ranges to within experimental error.