INELASTIC ELECTRON SCATTERING IN SiO2

ABSTRACT We have measured the cross section for 200 keV electrons scattered from thin amorphous SiO 2 foils. Energy losses from 0 to 600 eV were studied. This includes features at the oxygen K-edge, the silicon L 2 ,3-edge, and the low energy valence to conduction band transitions. The low energy spectra are also measured for finite momentum transfers out to q = 1.0 a -1 The results are discussed in the light of one electron band structure theories and possible excitonic effects.