Dependence of the electron drift velocity on the electrical field magnitude in GaxIn1−xAs, computed by the Monte Carlo method

Dependences of the electron drift velocity on the electrical field magnitude have been computed by the Monte Carlo method in a solid GaxIn1−xAs solution for compositions with x=0, 0.2, 0.4, 0.6, 0.8, 1.0. A three-valley band structure is used in the computation, where a γ-L-X sequence of valleys is taken for GaAs. In influence of scattering in the alloy and of an ionized impurity on the dependence Vdr (E) is studied. It is shown that the composition Ga0.6In0.4As is optimal from the viewpoint of the Gunn effect, where it exceeds GaAs in its characteristics. It follows from the results of the computation that the reason for the appearance of NDC (negative differential conductivity) in GaxIn1−xAs for x=0.6 is non-parabolicity of the γ-valley.