Some applications of V/sub BD/ and Q/sub BD/ tests

Much work has been done and many papers have been published on gate oxide integrity. The work is largely concentrated on characterization, modeling of oxide degradation and breakdown under stress and measurement techniques. With such extended knowledge and techniques on oxide reliability available, we can make use of that for monitoring wafer quality and process equipment. Here we show that V BD measurements reflect different aspect of oxide characteristics from Q BD measurements and each can be used for its corresponding monitoring applications