Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

Individual authors1 were supported in part by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The work at SCIPP4 was supported by the Department of Energy, grant DE-SC0010107. This work5 issupported and financed in part by the Spanish Ministry of Science, Innovation and Universities through the Particle Physics National Program, ref. FPA2015-65652-C4-4-R (MICINN/FEDER, UE), and co-financed with FEDER funds.