A Performance Comparative at Low Temperatures of Two FET Technologies: 65 nm and 14 nm

Since Moore's law has promoted a rapid evolution of FET technologies sometimes, key aspects stay unnoticed while novel nodes appear at the horizon. In this manuscript we present a study comparing the performance of the 65 nm MOSFET and the 14 nm SOI finFET technology, both at low temperatures, where main electrical parameters are analyzed. In the case of the MOSFET we cooled it down to 77 K, while for the finFET, we achieve to cooled it down to 340 mK. Thus, the intend of this work is to provide a vision of which technology is better at each application, such as quantum computing, astronomy, infrared and UV detectors, particle detectors, etc.