Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study

Highly perfect 3C-SiC thin films, on 6H-SiC deposited by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios were characterized by x-ray high resolution triple crystal diffractometry and double crystal topographic methods. The films were epitaxial with a low defect density present (mostly in the range of 10 7 /cm 2 ). X-ray topography revealed stacking faults, low angle grain boundaries, dislocations and inversion double positioning boundaries present in the film and substrate.