Electrical resistivity studies on Cd0.9Zn0.1Te single crystals grown by travelling heater method

Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perfection of the CZT wafers. Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. Highest resistivity of about 1.36 x 1011Ω.cm is obtainedfor the CZT wafer using gold electrodes with post-deposition thermal annealing.