Nanometer resolution in luminescence microscopy of III‐V heterostructures

D. L. Abraham,A. Veider,Ch. Schönenberger,H. P. Meier,D. J. Arent,S. F. Alvarado

Nanometer resolution in luminescence microscopy of III‐V heterostructures

1990

D. L. Abraham
A. Veider
Ch. Schönenberger
H. P. Meier
D. J. Arent
S. F. Alvarado

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

Keywords:

Heterojunction
Gallium arsenide
Optics
Photoluminescence
Epitaxy
Quantum well
Scanning tunneling microscope
Luminescence
Analytical chemistry
Microscopy
Physics
Quantum tunnelling
Molecular beam epitaxy

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