Method for improving the transistor performance by reducing the Salizidgrenzflächenwiderstandes

A method comprising: Etching a source region and a drain region in a silicon substrate, the etching produces a Unteratzprofil; Depositing a silicon-germanium alloy in the source region and the drain region; Depositing nickel on the silicon germanium alloy; Forming a nickel silicon germanium silicide layer wherein the nickel silicon germanium silicide layer is self-aligning.