On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

In this paper we present a numerical analysis of Schottky Barrier Diodes (SBDs) based on CVD (Chemical Vapour Deposition) Diamond. Material and interface models suitable for TCAD (Technology Computer Aided Design) finite element simulations were implemented in the software and their validity was assessed against experimental results obtained on MIP+(Metal-Intrinsic layer-highly P doped substrate) SBDs with Al and Au as Schottky metal contacts both at room and higher temperature conditions. The paper also highlights the need to improve such TCAD models since the complex behavior of Diamond based devices is still not well captured in static and dynamic conditions. The present work also discusses the role of the Oxygen surface interface in the on state performances of the SBDs.