A comparison of the reactions of phosphorus precursors on deposited GaP and InP films

The reactions of the phosphorus precursors tertiarybutylphosphine (TBP), tris(dimethylamino)phosphorus (TDMAP), and tertiarybutylbis(dimethylamino) phosphine (TBBDMAP) on deposited GaP and InP films have been compared in low-pressure conditions. The rates of decomposition are generally greater on GaP than on InP and correlate well with the reported growth results for chemical beam epitaxy (CBE). Those phosphorus precursors that can be used for epitaxial growth without precracking have the highest heterogeneous reaction rates. The differences in apparent activation energies suggest that these compounds adsorb more strongly on GaP than on InP surfaces.