A 2.5-Gb/s Receiver OEIC in 0.6- m BiCMOS Technology

A monolithically integrated optical receiver circuit in a 0.6- m silicon bipolar complementary metal oxide semicon- ductor technology with GHz is presented. It incorpo- rates a vertical p-i-n photodetector with a responsivity of 0.36 and 0.26 A/W at 660 and 850 nm, respectively. At these wavelengths, sensitivities of 23.5 and 21.2 dBm, respectively, at a bit rate of 2.5 Gb/s and a bit-error rate of are achieved. The tran- simpedance gain of the receiver is 18 and overall 3-dB band- widths of 1.35 and 1.05 GHz at 660 and 850 nm, respectively, are observed. Index Terms—Integrated optoelectronics, optical interconnect receivers, optoelectronic integrated circuits (OEICs), photo receivers, p-i-n photodiode, silicon.