Photoenhanced MOCVD of PbZrxTi1−xO3 thin films

Abstract Growth of PbZr x Ti 1− x O 3 (PZT) thin films was performed by photoenchanced metalorganic chemical vapor deposition (MOCVD), using Pb(C 2 H 5 ) 4 , Zr(O-t-C 4 H 9 ) 4 , NO 2 and O 3 . When NO 2 was used as an oxidizing gas, the observed photoirradiation effects were an increase in the growth rate, an increase in the Zr content in the films, a change in the ferroelectric properties and a decrease in leakage current densities. When O 3 was used, an increase in the growth rate was also observed. When films were grown using O 3 and UV + O 3 , the films showed better leakage current characteristics than the films grown using O 2 .