Compact Model of ESD Diode Suitable for Subnanosecond Switching Transients

This work presents a non-quasi-static compact model of ESD diodes for circuit simulation. The model accurately predicts the transient behavior of the diode during both turn-on and turn-off. The accurate representation of the turn-off transient is achieved in part by modeling the time delay from an applied reverse bias to the avalanche multiplication of the reverse current. There is good agreement between measurement and simulation, even when the device is tested using sinusoidal rather than square pulses.