Cristallogenese et proprietes electriques du compose ZnSiAs2
1977
Abstract Crystals of ZnSiAs 2 have been grown from stoechiometric melt, from XZn-(1−x)As solutions and by chemical vapor transport reaction. Resistivity and Hall coefficient of these crystals are measured between 77 and 300K; these transport properties are dependent on the cristallization methods used.
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